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APTGF500U60D4G
Single switch NPT IGBT Power Module
1
VCES = 600V IC = 500A @ Tc = 80C
Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies * Motor control Features * Non Punch Through (NPT) IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated * Kelvin emitter for easy drive * M6 connectors for power * M4 connectors for signal * High level of integration Benefits * Outstanding performance at high frequency operation * Stable temperature behavior * Very rugged * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Easy paralleling due to positive TC of VCEsat * RoHS Compliant
3 5 2
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25C TC = 80C TC = 25C TC = 25C Tj = 125C Max ratings 600 670 500 1000 20 2200 1200A@520V Unit V A V W
APTGF500U60D4G - Rev 1 July, 2008
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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1-5
APTGF500U60D4G
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V VCE = 600V Tj = 25C Tj = 125C Tj = 25C VGE = 15V IC = 600A Tj = 125C VGE = VCE , IC = 9mA VGE = 20V, VCE = 0V Min Typ Max 500 1 2.45 6.5
1900
Unit A mA V V nA
4.5
1.95 2.2 5.5
Dynamic Characteristics
Symbol Characteristic Cies Input Capacitance Cres Reverse Transfer Capacitance QG Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Isc Gate charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn on Energy Turn off Energy Short Circuit data Test Conditions VGE = 0V, VCE = 25V f = 1MHz VGE=15V, IC=600A VCE=300V Inductive Switching (25C) VGE = 15V VBus = 300V IC = 600A RG = 12 Inductive Switching (125C) VGE = 15V VBus = 300V IC = 600A RG = 12 VGE = 15V Tj = 125C VBus = 300V IC = 600A Tj = 125C RG = 12 VGE 15V ; VBus = 360V tp 10s ; Tj = 125C Min Typ 26 2.4 1.5 150 72 530 40 160 75 550 50 28 26 2700 mJ mJ A ns Max Unit nF C
ns
Reverse diode ratings and characteristics
Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRRM IF VF trr Qrr Err Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy IF = 600A VR = 300V IF = 600A VGE = 0V Test Conditions VR = 600V Tj = 25C Tj = 125C Tc = 80C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Min 600 Typ Max 750 1000 600 1.25 1.2 150 250 36 56 8 16 1.6 Unit V A A V ns C mJ
APTGF500U60D4G - Rev 1 July, 2008
di/dt =7000A/s
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APTGF500U60D4G
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight M6 M4 IGBT Diode 2500 -40 -40 -40 3 1 Min Typ Max 0.055 0.11 150 125 125 5 2 350 Unit
C/W
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
V C N.m g
D4 Package outline (dimensions in mm)
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APTGF500U60D4G - Rev 1 July, 2008
APTGF500U60D4G
Typical Performance Curve
Output Characteristics (VGE=15V) Output Characteristics 1200 1000
TJ=125C TJ = 125C VGE=15V VGE=12V
1200 1000
IC (A)
TJ=25C
800 600 400 200 0 0 0.5 1 1.5 2 VCE (V) 2.5
800 IC (A) 600 400 200 0
VGE=20V
VGE=9V
3
3.5
0
1
2
3 VCE (V)
4
5
1200 1000 800
Transfert Characteristics 60 50 40 E (mJ) 30 20
TJ=25C
Energy losses vs Collector Current
VCE = 300V VGE = 15V RG = 12 TJ = 125C
Eon
IC (A)
600 400 200 0 5 6 7 8 9 10 11 12 VGE (V) Switching Energy Losses vs Gate Resistance 80
VCE = 300V VGE =15V IC = 600A TJ = 125C Eon TJ=125C
Eoff Err
10 0 0 150 300 450 IC (A) 600 750 900
1400 1200 1000 IC (A)
Eoff
Reverse Safe Operating Area
60 E (mJ)
40
800 600 400
VGE=15V TJ=125C RG=12
20
Err
200 0 0
0 10 15 20 25 30 35 40 Gate Resistance (ohms) 45
100
200
300 VCE (V)
400
500
600
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 0.06 Thermal Impedance (C/W) 0.05 0.04 0.03 0.02 0.01 0.9 0.7 0.5 0.3 0.1 0.05 0.0001 Single Pulse 0.001 0.01 0.1 rectangular Pulse Duration (Seconds) 1 10
IGBT
0 0.00001
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APTGF500U60D4G - Rev 1 July, 2008
APTGF500U60D4G
Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 70 60 50 40 30 20 10 0 0 100 200 300 400 IC (A) 500 600 700
hard switching ZVS VCE=300V D=50% RG=12 TJ=125C TC=75C ZCS
Forward Characteristic of diode 1200 1000 800 IF (A) 600 400 200 0 0 0.3 0.6 0.9 VF (V) 1.2 1.5
TJ=25C TJ=125C
0.12 Thermal Impedance (C/W) 0.1 0.08 0.06 0.04 0.02
0.9 0.7 0.5 0.3 0.1 0.05
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration Diode
Single Pulse
0 0.00001
0.0001
0.001 0.01 0.1 rectangular Pulse Duration (Seconds)
1
10
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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APTGF500U60D4G - Rev 1 July, 2008

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